1/5 esda6v1p6 ? october 2002 - ed: 1 quad transil? array for esd protection sot-666 where transient overvoltage protection in esd sensitive equipment is required, such as : n computers n printers n communication systems and cellular phones n video equipment this device is particularly adpated to the protection of symmetrical signals. main applications application specific discretes a.s.d. 1 3 2 6 5 4 functional diagram n 4 unidirectional transil? functions. n breakdown voltage v br = 6.1v min n low leakage current < 500 na n very small pcb area < 2.6 mm 2 features the esda6v1p6 is a monolithic array designed to protect up to 4 lines against esd transients. this device is ideal for applications where board space saving is required. description n high esd protection level. n high integration. n suitable for high density boards. benefits n iec61000-4-2 level 4: 15 kv (air discharge) 8 kv (contact discharge) n mil std 883e-method 3015-7: class 3 25kv hbm (human body model) complies with the following standards :
esda6v1p6 2/5 symbol parameter v rm stand-off voltage v br breakdown voltage v cl clamping voltage i rm leakage current i pp peak pulse current a t voltage tempature coefficient v f forward voltage drop c capacitance per line r d dynamic resistance electrical characteristics (t amb = 25c) v i v cl v br v rm i f v f i rm i pp slope: 1/r d symbol parameter test conditions value unit v pp esd discharge - iec61000-4-2 air discharge iec61000-4-2 contact discharge 15 8 kv p pp peak pulse power (8/20 m s) (see note 1) t j initial = tamb 150 w t j junction temperature 125 c t stg storage temperature range -55to+150 c t l maximum lead temperature for soldering during 10s at 5mm for case 260 c t op operating temperature range -40to+150 c note 1: for a surge greater than the maximum values , the diode will fail in short-circuit. absolute ratings (t amb = 25c) types v br @i r i rm @v rm rd a tc min. max. max. typ. max. typ. @0v vvma m av w 10 -4 /c pf esda6v1p6 6.1 7.2 1 0.5 3 1.5 4.5 70 symbol parameter value unit r th(j-a) junction to ambient on printed circuit on recommended pad layout 220 c/w thermal resistances
esda6v1p6 3/5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 150 p [t initial] / p [t initial=25c) pp j pp j t (c) j fig. 1: relative variation of peak pulse power versus initial junction temperature. 10 100 1000 1 10 100 p (w) pp t (s) p t initial=25c j fig. 2: peak pulse power versus exponential pulse duration. 0.1 1.0 10.0 100.0 0 10203040506070 i (a) pp v (v) cl t =2.5s t initial=25c p j fig. 3: clamping voltage versus peak pulse current (typical values, rectangular waveform). 1.e-03 1.e-02 1.e-01 1.e+00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i (a) fm v (v) fm t =125c j t =25c j fig. 4: forward voltage drop versus peak forward current (typical values). 0 10 20 30 40 50 60 70 80 0123456 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j fig. 5: junction capacitance versus reverse voltage applied (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 50 75 100 125 i [t ] / i [t =25c] rj rj v =3v r t (c) j fig. 6: relative variation of leakage current versus junction temperature (typical values).
esda6v1p6 4/5 iec61000-4-2: v =8kv contact pp fig. 7: esd response @ v pp =8kv contact. iec61000-4-2: v =15kv contact pp fig. 8: esd response @ v pp =15kv contact. esda 6v1 p6 esd array v min br package: sot-666 order code ordering type marking package weight base qty delivery mode esda6v1p6 b sot-666 2.9 mg. 3000 tape & reel
esda6v1p6 5/5 package mechanical data sot-666 d bp e1 e e lp he a u ref. dimensions millimeters inches min. max. min. max. a 0.50 0.60 0.020 0.024 bp 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 d 1.50 1.70 0.060 0.067 e 1.10 1.30 0.043 0.051 e 1.00 0.040 e1 0.50 0.020 he 1.50 1.70 0.059 0.067 lp 0.10 0.30 0.004 0.012 0.5 0.3 2.75 0.43 1.16 foot print (in millimeters) information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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